A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)

نویسندگان

چکیده

Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar MOSFETs provide challenges due to their high density of interface traps significant gate-to-drain capacitance. In order enhance the reverse recovery property device, a Schottky barrier diode (SBD) was added source contact area, top current spreading region, trench-etched double-diffused MOS (TED MOS). Two types SBD structures were optimized improve electrical properties using 3D simulation software, “TCAD Silvaco”. During simulation, carriers device withdrawn from SBD, indicating that new design effective. It also showed depended on temperature, carrier lifetime, work functions metals. All designs evaluated in various circumstances determine trend. Ultimately, high-speed switching circuits, TED with structure efficiently boosted speed, while reducing loss.

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ژورنال

عنوان ژورنال: Crystals

سال: 2023

ISSN: ['2073-4352']

DOI: https://doi.org/10.3390/cryst13040650